Simplifying The Cathodoluminescence Workflow For Monolayer Semiconductor Materials

Join our webinar about monolayer semiconductor materials, and discover how their physical processes can be studied using a simplified cathodoluminescence (CL) workflow. Learn from an expert in the field, and ask questions in the interactive discussions!

What to expect:

• Learn how CL can be used to characterize monolayer semiconductor materials
• Discover a simplified CL workflow using silicon dioxide substrates
• Learn how an optimal acceleration voltage value enables the most efficient measurements

More information:

Transition metal dichalcogenide (TMDC) monolayers are direct bandgap semiconducting nanomaterials. Their bright light emission mainly comes from the efficient radiative recombination of excitons, which have a nanoscale spatial extension. In order to understand the physical processes leading to light emission, and to be able to control them, it’s crucial to study these materials at the nanoscale.

In this webinar, our application specialist Noémie Bonnet will show her research on using cathodoluminescence (CL) imaging to measure the nanoscale interaction between the electron beam and a TMDC monolayer sample encapsulated in hexagonal boron nitride (hBN), a wide bandgap material. The hBN encapsulation is necessary to increase the CL emission intensity. In her research, she uses TEM grids and silicon dioxide substrates, the latter of which greatly simplifies the CL workflow for these materials and opens up the possibility for 3D substrates. She also obtained a direct comparison of cryo stage TEM and room temperature SEM measurements.

Sign up for our webinar to see the results!